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Reactive wetting of Hg–Ag system at room temperature

✍ Scribed by Avraham Be’er; Yossi Lereah; Haim Taitelbaum


Book ID
104063511
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
751 KB
Volume
495
Category
Article
ISSN
0921-5093

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ChemInform Abstract: Wet Chemical Digita
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Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of ≈ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without