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Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

✍ Scribed by Ellison, A.; Radamson, H.; Tuominen, M.; Milita, S.; Hallin, C.; Henry, A.; Kordina, O.; Tuomi, T.; Yakimova, R.; Madar, R.; Janzén, E.

Book ID
122345488
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
774 KB
Volume
6
Category
Article
ISSN
0925-9635

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## Abstract We report a full wafer size investigation of the homogeneity of electrical properties in the case of co‐implanted nitrogen and phosphorus ions in 4H–SiC semi‐insulating wafers. To match standard industrial requirements, implantation was done at room temperature. To achieve a detailed el