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Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

✍ Scribed by Wutimakun, Passapong; Miyazaki, Hisashi; Okamoto, Yoichi; Morimoto, Jun; Hayashi, Toshihiko; Shiomi, Hiromu


Book ID
124061642
Publisher
Trans Tech Publications, Ltd.
Year
2008
Tongue
English
Weight
1002 KB
Volume
600-603
Category
Article
ISSN
1662-9752

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## Abstract Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found