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Wafer direct bonding with ambient pressure plasma activation

✍ Scribed by Markus Gabriel; Brad Johnson; Ralf Suss; Manfred Reiche; Marko Eichler


Book ID
106184833
Publisher
Springer-Verlag
Year
2006
Tongue
English
Weight
309 KB
Volume
12
Category
Article
ISSN
0946-7076

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Atmospheric-pressure plasma pretreatment
✍ M. Eichler; B. Michel; M. Thomas; M. Gabriel; C.-P. Klages πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 631 KB

Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 Β°C. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such