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Wafer curvature in molecular beam epitaxy grown heterostructures

✍ Scribed by Dieing, T.; Usher, B. F.


Book ID
125531976
Publisher
The American Physical Society
Year
2003
Tongue
English
Weight
205 KB
Volume
67
Category
Article
ISSN
1098-0121

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## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between