𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy

✍ Scribed by J. Y. Leem; J. S. Son; C. R. Lee; C. S. Kim; Y. K. Cho; H. J. Lee; S. K. Noh; I. H. Bae


Book ID
121749549
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
321 KB
Volume
71
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Ni3Se4/ZnSe Heterostructured Nanowires G
✍ Gan Wang; Shu Kin Lok; George K. L. Wong; Iam Keong Sou πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 655 KB

By exploiting the desired properties of different materials, a heterostructure can be tailored to acquire optimal functionality for a specifi c device. Heterojunction formation in semiconductor nanowires (NWs) is crucial for many predicted applications in nanoscale optoelectronics. [1][2][3] Recentl