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Electric field effects in photoreflectance spectra of ZnSe epilayers grown on GaAs by molecular beam epitaxy

✍ Scribed by Constantino, M E; Salazar-Hernández, B


Book ID
125450705
Publisher
Institute of Physics
Year
2003
Tongue
English
Weight
137 KB
Volume
37
Category
Article
ISSN
0022-3727

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Growth of high quality of ZnSe epilayers
✍ Jin-Sang Kim; Jong-Hyeng Song; Sang-Hee Suh 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 247 KB

We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop