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Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

✍ Scribed by Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V.

Book ID
121607492
Publisher
Springer
Year
2013
Tongue
English
Weight
161 KB
Volume
47
Category
Article
ISSN
1063-7826

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Two dimensional electron gases in SiGe/S
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✍ J. M. FernΓ‘ndez; A. Matsumura; X. M. Zhang; M. H. Xie; L. Hart; J. Zhang; B. A. πŸ“‚ Article πŸ“… 1995 πŸ› Springer US 🌐 English βš– 799 KB

We have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.3o) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2Hs), germane (GeH4), and arsine (AsHa) are used as