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Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy

✍ Scribed by P. Das Kanungo; A. Wolfsteller; N.D. Zakharov; P. Werner; U. Gösele

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
361 KB
Volume
40
Category
Article
ISSN
0026-2692

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi