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Solid boron and antimony doping of Si and SiGe grown by gas source molecular beam epitaxy

✍ Scribed by S. H. Li; P. K. Bhattacharya; S. W. Chung; J. X. Zhou; E. Gulari

Book ID
112817898
Publisher
Springer US
Year
1993
Tongue
English
Weight
402 KB
Volume
22
Category
Article
ISSN
0361-5235

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Two dimensional electron gases in SiGe/S
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✍ J. M. FernΓ‘ndez; A. Matsumura; X. M. Zhang; M. H. Xie; L. Hart; J. Zhang; B. A. πŸ“‚ Article πŸ“… 1995 πŸ› Springer US 🌐 English βš– 799 KB

We have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.3o) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2Hs), germane (GeH4), and arsine (AsHa) are used as