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Low antimony-doped GaNxAs1−x on GaAs grown by solid-source molecular-beam epitaxy

✍ Scribed by W.K. Cheah; W.J. Fan; S. Wicaksono; S.F. Yoon; K.H. Tan


Book ID
108341938
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
267 KB
Volume
254
Category
Article
ISSN
0022-0248

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Antimony incorporation in InAs quantum d
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We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo