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The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

✍ Scribed by S.D. Wu; L.W. Guo; W.X. Wang; Z.H. Li; X.Z. Shang; H.Y. Hu; Q. Huang; J.M. Zhou

No coin nor oath required. For personal study only.

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