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Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy

✍ Scribed by Sadofev, S.; Blumstengel, S.; Cui, J.; Puls, J.; Rogaschewski, S.; Schafer, P.; Henneberger, F.

Book ID: 111925341
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 595 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2388250

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## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between