## Abstract Nanosized GaN dot structures were fabricated on Si(111) substrate by droplet epitaxy using an rf plasma MBE system. The size and density of the GaN dots could be controlled by changing the amount of Ga supplied. By reducing the Ga supply, a maximum dot density of 3.3 × 10^11^ cm^–2^ was
✦ LIBER ✦
Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
✍ Scribed by J. H. Lee; Zh. M. Wang; E. S. Kim; N. Y. Kim; S. H. Park; G. J. Salamo
- Book ID
- 107470607
- Publisher
- Springer-Verlag
- Year
- 2009
- Tongue
- English
- Weight
- 392 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1931-7573
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