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Fabrication of GaN dot structures on Si substrates by droplet epitaxy

✍ Scribed by Kondo, Toshiyuki ;Saitoh, Koji ;Yamamoto, Yo ;Maruyama, Takahiro ;Naritsuka, Shigeya

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
201 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Nanosized GaN dot structures were fabricated on Si(111) substrate by droplet epitaxy using an rf plasma MBE system. The size and density of the GaN dots could be controlled by changing the amount of Ga supplied. By reducing the Ga supply, a maximum dot density of 3.3 Γ— 10^11^ cm^–2^ was realized. Photoluminescence measurements at room temperature showed band edge emission with negligible yellow luminescence, which indicates a good optical property of GaN dots grown by this technique. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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