Magneto-photoluminescence study of InGaAs quantum dots fabricated by droplet epitaxy
β Scribed by T Mano; K Watanabe; S Tsukamoto; Y Imanaka; T Takamasu; H Fujioka; G Kido; M Oshima; N Koguchi
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 148 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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We present the first radiative lifetime measurements and magneto-photoluminescence results of excited states in InGaAs/GaAs semiconductor self-assembled quantum dots. By increasing the photo-excitation intensity, excited state interband transitions up to n = 5 can be observed in the emission spectru
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum