๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy

โœ Scribed by T. Kawazu; T. Mano; T. Noda; H. Sakaki


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
390 KB
Volume
42
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Tuning optical properties of high In con
โœ B. Ilahi; L. Sfaxi; G. Bremond; H. Maaref ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 137 KB

The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen