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Fabrication of height-controlled InAs quantum dots on GaAs surfaces by in situ AsBr3 etching and molecular beam epitaxy

โœ Scribed by T Yang; S Kohmoto; H Nakamura; K Asakawa

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
120 KB
Volume
13
Category
Article
ISSN
1386-9477

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Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [