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Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy

✍ Scribed by Takeshi Noda; Takaaki Mano


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
604 KB
Volume
254
Category
Article
ISSN
0169-4332

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Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [