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Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

✍ Scribed by Lianshan Wang; Xianglin Liu; Yude Zan; Du Wang; Jun Wang; Dacheng Lu; Zhanguo Wang


Publisher
SP Science China Press
Year
1998
Tongue
English
Weight
614 KB
Volume
41
Category
Article
ISSN
1006-9321

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Silicon ions have been implanted in undoped n-type GaN layers epitaxially grown on an AlN/(0001)-Al 2 O 3 substrate. Electrical profiles for n-type GaN layers, formed by dual-energy implantation with 50 and 100 keV Si + ions to a total fluence of 6 β€’ 10 15 /cm 2 , have been examined by differential