Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
β Scribed by Lianshan Wang; Xianglin Liu; Yude Zan; Du Wang; Jun Wang; Dacheng Lu; Zhanguo Wang
- Publisher
- SP Science China Press
- Year
- 1998
- Tongue
- English
- Weight
- 614 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1006-9321
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π SIMILAR VOLUMES
## Abstract Nanosized GaN dot structures were fabricated on Si(111) substrate by droplet epitaxy using an rf plasma MBE system. The size and density of the GaN dots could be controlled by changing the amount of Ga supplied. By reducing the Ga supply, a maximum dot density of 3.3 Γ 10^11^ cm^β2^ was
Silicon ions have been implanted in undoped n-type GaN layers epitaxially grown on an AlN/(0001)-Al 2 O 3 substrate. Electrical profiles for n-type GaN layers, formed by dual-energy implantation with 50 and 100 keV Si + ions to a total fluence of 6 β’ 10 15 /cm 2 , have been examined by differential