Variation of bonding structure near the surface of carbon nitride films
โ Scribed by Liudi Jiang; A.G Fitzgerald; M.J Rose
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 171 KB
- Volume
- 158
- Category
- Article
- ISSN
- 0169-4332
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โฆ Synopsis
ลฝ
. Amorphous carbon nitride a-C:N films were deposited by reactive direct current magnetron sputtering of graphite using ลฝ . a gaseous mixture of Ar and N . X-ray photo electron spectroscopy analysis XPS showed that there is an optimum volume 2 ratio of nitrogen:argon in the sputter gas that results in a maximum content of incorporated nitrogen in the films. By using different take-off angles in XPS experiments, the variation gradient of bonding structure near the surface of a-C:N films has also been studied. In the surface layer of the a-C:N films, it was found that some of the initially formed b-C N -like phase 3 4 transforms to a graphite-like carbon-nitrogen phase. This structural change is driven by the nitrogen in the sputter gas during deposition.
๐ SIMILAR VOLUMES
Amorphous carbon nitride films (a-CN x ) were deposited on Si(100) under different rf power and at different substrate temperature T S using rf magnetron sputtering of a high-purity graphite target in pure nitrogen. IR absorption, Raman spectra, and residual stress measurements are used to character