Effects of deposition temperature on the structure of amorphous carbon nitride films
β Scribed by M. Therasse; M. Benlahsen
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 134 KB
- Volume
- 129
- Category
- Article
- ISSN
- 0038-1098
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β¦ Synopsis
Amorphous carbon nitride films (a-CN x ) were deposited on Si(100) under different rf power and at different substrate temperature T S using rf magnetron sputtering of a high-purity graphite target in pure nitrogen. IR absorption, Raman spectra, and residual stress measurements are used to characterise the films in the as deposited state. The differences in the microstructure of the a-CN x films is related to differences in the deposition mechanism. The T S contribution can operate to increase the connectivity of the C-C network. The stress evolution is the result of the densification, i.e. a structural transformation within of the films that accompanies the nitrogen evolution, due to the C-N and C-C evolution when T S is increased.
π SIMILAR VOLUMES
Amorphous carbon nitride thin films were deposited on polymer substrates using radio frequency (rf) plasma in a mixture of nitrogen (N 2 ) and acetylene (C 2 H 2 ) gasses. The samples were prepared at different rf plasma power (350, 400, 450, 500, and 550 W), at constant plasma exposure time of 10 m