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Variations in pore structure of reaction-bonded silicon nitride (RBSN)

โœ Scribed by S. C. Danforth; M. H. Richman

Publisher
Springer
Year
1979
Tongue
English
Weight
266 KB
Volume
14
Category
Article
ISSN
0022-2461

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โœ J Desmaison; N Roels; P Belair ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 688 KB

## Chemical vapour deposition of Si3N 4 by pyrolysis (1200-1275ยฐC) of tetramethylsilane-ammonia-hydrogen mixtures (N:Si = 10) was used to protect reaction-bonded silicon nitride substrates against internal oxidation at 1000-1350 ยฐC. The results reveal the existence of a critical thickness (6 gm)