## Abstract The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline fi
Vapor Pressures of Precursors for the Chemical Vapor Deposition of Silicon-Based Films
β Scribed by G.R. Alcott; R.M.C.M. van de Sanden; S. Kondic; J.L. Linden
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 372 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0948-1907
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