𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Vacancy model of micropipe annihilation in epitaxial silicon carbide layers

✍ Scribed by S. Yu. Davydov; A. A. Lebedev


Book ID
111444955
Publisher
Springer
Year
2011
Tongue
English
Weight
170 KB
Volume
45
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Epitaxial growth of silicon carbide laye
✍ Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 826 KB

The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi

In situ etch treatments of silicon carbi
✍ Angelis, S. De ;Perrone, D. ;Scaltrito, L. ;Ferrero, S. ;Pirri, C. F. ;Mauceri, πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 135 KB

## Abstract Different homo epitaxial 4H‐SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural