Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
β Scribed by S. Yu. Davydov; A. A. Lebedev
- Book ID
- 111444955
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 170 KB
- Volume
- 45
- Category
- Article
- ISSN
- 1063-7826
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The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi
## Abstract Different homo epitaxial 4HβSiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural