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Hydrogen incorporation in epitaxial layers of 4H- and 6H-silicon carbide grown by vapor phase epitaxy

✍ Scribed by Schöner, Adolf; Rottner, Kurt; Nordell, Nils; Linnarsson, Margareta; Peppermüller, Christian; Helbig, Reinhard

Book ID
123458438
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
531 KB
Volume
6
Category
Article
ISSN
0925-9635

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The incorporation tit hydrogen into MO('Vl)-grov, n la~,ct <, <+1 c'd It. t lg Ic and (dl [glc using tt as the ~ cctt+t gas liar,, been studied. ('onccnl.rations of incorporcitcd n going liotll {].S . lii ~ cm ' to 5 • 11i ~' L t.'ll] < ha\c hccn found I~, <,Ibis in ('dTE hlyers. Ibis C(lllt.'Clllla