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Deep level transient spectroscopy assessment of silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy

✍ Scribed by E. Calleja; F. Sanchez; E. Muñoz; P. Gibart; A. Powell; J. S. Roberts


Book ID
112812600
Publisher
Springer US
Year
1995
Tongue
English
Weight
552 KB
Volume
24
Category
Article
ISSN
0361-5235

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In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen