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The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

✍ Scribed by Hallin, C.; Konstantinov, A.O.; Pécz, B.; Kordina, O.; Janzén, E.

Book ID
122365236
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
932 KB
Volume
6
Category
Article
ISSN
0925-9635

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