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High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition

✍ Scribed by Sasaki, K.; Sakuma, E.; Misawa, S.; Yoshida, S.; Gonda, S.


Book ID
115544486
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
413 KB
Volume
45
Category
Article
ISSN
0003-6951

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