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Setup parameters controlling the growth rate of silicon carbide epitaxial layers in a vacuum

✍ Scribed by S. Yu. Davydov; A. A. Lebedev; N. S. Savkina; A. A. Volkova

Book ID
110141734
Publisher
Springer
Year
2005
Tongue
English
Weight
70 KB
Volume
50
Category
Article
ISSN
1063-7842

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πŸ“œ SIMILAR VOLUMES

Epitaxial growth of silicon carbide laye
Epitaxial growth of silicon carbide layers by sublimation β€žsandwich method” (I) growth kinetics in vacuum
✍ Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 826 KB

The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi