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Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions

✍ Scribed by Lulli, G.; Bianconi, M.; Solmi, S.; Napolitani, E.; Carnera, A.

Book ID: 120324760
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 343 KB
Volume: 87
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.373564

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