Ion Implantation and Synthesis of Materials || Doping, Diffusion and Defects in Ion-Implanted Si

✍ Scribed by Nastasi, Michael; Mayer, James W.

• Book ID: 119954331
• Publisher: Springer Berlin Heidelberg
• Year: 2006
• Tongue: German
• Weight: 676 KB
• Edition: 2006
• Category: Article
• ISBN: 3540452982
• DOI: 10.1007/978-3-540-45298-0_9

✦ Synopsis

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.