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Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H-SiC at very high growth rates

✍ Scribed by Siva Kotamraju; Bharat Krishnan; Yaroslav Koshka

Book ID: 112182860
Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 228 KB
Volume: 3
Category: Article
ISSN: 1862-6254
DOI: 10.1002/pssr.200903149

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