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Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

✍ Scribed by Ito, Masahiko; Storasta, Liutauras; Tsuchida, Hidekazu

Book ID: 121478344
Publisher: Institute of Pure and Applied Physics
Year: 2008
Tongue: English
Weight: 850 KB
Volume: 1
Category: Article
ISSN: 1882-0778
DOI: 10.1143/APEX.1.015001

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