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Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

✍ Scribed by Ishida, Yuuki; Takahashi, Tetsuo; Kojima, Kazutoshi; Okumura, Hajime; Arai, Kazuo; Yoshida, Sadafumi

No coin nor oath required. For personal study only.

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