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High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

✍ Scribed by C. Hallin; A. Kakanakova-Georgieva; P. Persson; E. Janzén

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 351 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461615

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