✦ LIBER ✦
Growth rate for the selective epitaxial growth of III–V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments
✍ Scribed by Jiang, S.; Merckling, C.; Guo, W.; Waldron, N.; Caymax, M.; Vandervorst, W.; Seefeldt, M.; Heyns, M.
- Book ID
- 121470329
- Publisher
- Elsevier Science
- Year
- 2014
- Tongue
- English
- Weight
- 740 KB
- Volume
- 391
- Category
- Article
- ISSN
- 0022-0248
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