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Unusual persistent photoconductivity in the InAs/AlSb quantum well

✍ Scribed by Yu. G. Sadofyev; A. Ramamoorthy; J. P. Bird; S. R. Johnson; Y. -H. Zhang

Book ID
110140921
Publisher
Springer
Year
2005
Tongue
English
Weight
66 KB
Volume
39
Category
Article
ISSN
1063-7826

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A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum