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Scattering mechanisms in InAs–AlSb quantum wells

✍ Scribed by S. Brosig; K. Ensslin; B. Brar; M. Thomas; H. Kroemer


Book ID
104429087
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
99 KB
Volume
2
Category
Article
ISSN
1386-9477

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A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum