๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Studies of GaSb-capped InAs/AlSb quantum wells by resonant raman scattering

โœ Scribed by J. Wagner; J. Schmitz; M. Maier; J.D. Ralston; P. Koidl


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
324 KB
Volume
37
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Study of Stark effect in AlSb/GaSb/InAs/
โœ Y.W. Chen; H.S. Li; K.L. Wang ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 161 KB

A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum