Study of Stark effect in AlSb/GaSb/InAs/AlSb quantum well

✍ Scribed by Y.W. Chen; H.S. Li; K.L. Wang

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 161 KB
• Volume: 14
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1993.1114

✦ Synopsis

A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum well can provide free carriers without extrinsic doping since the carriers can transfer from GaSb to InAs. The free carrier concentration is determined by temperature and the energy difference between the conduction state in InAs and the valence state in (\mathrm{GaSb}). Applying a bias across the quantum well, i.e. Stark effect, will change the energy difference and thus the free carrier concentration. The Stark effect in this structure is studied by a transfer matrix (\mathbf{K} \cdot \mathbf{P}) approach including the band bending effect. Preliminary experimental results and potential applications for this type of device are discussed.