A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum
โฆ LIBER โฆ
Collective effects in the intersubband resonance of InAs/AlSb quantum wells
โ Scribed by R.J. Warburton; C. Gauer; A. Wixforth; J.P. Kotthaus; B. Brar; H. Kroemer
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 287 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0749-6036
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