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Intersubband transitions in InAs/AlSb quantum wells

✍ Scribed by A. Simon; J. Scriba; C. Gauer; A. Wixforth; J.P. Kotthaus; C.R. Bolognesi; C. Nguyen; G. Tuttle; H. Kroemer

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
317 KB
Volume
21
Category
Article
ISSN
0921-5107

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Study of Stark effect in AlSb/GaSb/InAs/
Study of Stark effect in AlSb/GaSb/InAs/AlSb quantum well
✍ Y.W. Chen; H.S. Li; K.L. Wang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 161 KB

A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum