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Excitonic insulator transition in a GaSbAlSbInAs quantum-well structure

✍ Scribed by Xiaodong Zhu; J.J. Quinn; Godfrey Gumbs

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
336 KB
Volume
75
Category
Article
ISSN
0038-1098

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Study of Stark effect in AlSb/GaSb/InAs/
Study of Stark effect in AlSb/GaSb/InAs/AlSb quantum well
✍ Y.W. Chen; H.S. Li; K.L. Wang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 161 KB

A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum