Structure of InAs quantum dots-in-a-well nanostructures
✍ Scribed by A. Lenz; H. Eisele; R. Timm; L. Ivanova; H.-Y. Liu; M. Hopkinson; U.W. Pohl; M. Dähne
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 565 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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The interband optical transitions of InAs/In x Ga 1-x As dots-in-a-well (DWELL) structure is investigated theoretically and compared with experiment. The electronic structure was obtained by solving a steadystate effective-mass Schrödinger equation in cylindrical co-ordinates taking into account the
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum