Magnetotransport investigation of a GaSb/InAs/GaSb quantum well in pulsed magnetic fields
β Scribed by R. Bogaerts; F. Herlach; B.J. van Wees; G. Borghs
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 285 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
Current vs voltage characteristics of InAs/GaSb/InAs diodes were studied in two samples with a different width of GaSb layers under pulsed high magnetic fields up to 40 T. A current peak of negative differential conductivity was found to decrease with increasing magnetic fields. Moreover, more than
A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum