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Zero-field spin-splitting in InAs/AlSb quantum wells

✍ Scribed by C. Gauer; M. Hartung; A. Wixforth; J.P. Kotthaus; B. Brar; H. Kroemer

Book ID: 116068501
Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 282 KB
Volume: 361-362
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(96)00448-7

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A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum