We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicondioxide, we argue that the hard
Universal stress-defect correlation at (100)semiconductor/oxide interfaces
✍ Scribed by Houssa, M.; Scarrozza, M.; Pourtois, G.; Afanasâev, V. V.; Stesmans, A.
- Book ID
- 120407100
- Publisher
- American Institute of Physics
- Year
- 2011
- Tongue
- English
- Weight
- 747 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0003-6951
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract We introduce a theoretical scheme to study defect energy levels and band alignments at semiconductor–oxide interfaces. The scheme relies on hybrid functionals to overcome the band gap underestimation typically achieved with semilocal density functionals. For atomically localized defects
We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si