𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Universal stress-defect correlation at (100)semiconductor/oxide interfaces

✍ Scribed by Houssa, M.; Scarrozza, M.; Pourtois, G.; Afanas’ev, V. V.; Stesmans, A.


Book ID
120407100
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
747 KB
Volume
98
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Hydrogen-related defect creation at the
✍ B.R. Tuttle; K. Hess; L.F. Register 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 73 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicondioxide, we argue that the hard

A hybrid functional scheme for defect le
✍ Broqvist, Peter ;Alkauskas, Audrius ;Pasquarello, Alfredo 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 274 KB

## Abstract We introduce a theoretical scheme to study defect energy levels and band alignments at semiconductor–oxide interfaces. The scheme relies on hybrid functionals to overcome the band gap underestimation typically achieved with semilocal density functionals. For atomically localized defects

Hydrogen and hot electron defect creatio
✍ Blair R. Tuttle; William McMahon; Karl Hess 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 82 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si