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Uniform deposition of in situ doped polysilicon films by ultralow pressure chemical vapour deposition

✍ Scribed by W. Ahmed; R.D. Pilkington; D.B. Meakin


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
385 KB
Volume
202
Category
Article
ISSN
0040-6090

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroΓ‘uoric acid (BHF) were investigated using Ruth