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Phosphorus-doped silicon films prepared by low pressure chemical vapour deposition of disilane and phosphine

✍ Scribed by W. Ahmed; D.B. Meakin

Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 145 KB
Volume: 148
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(87)90162-3

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